Noise-induced roughening evolution of amorphous Si films grown by thermal evaporation.

نویسندگان

  • Yang
  • Zhao
  • Wang
  • Lu
چکیده

We report a growth front morphology study of thermally evaporated amorphous Si films using atomic force microscopy. Since there are no well-defined atomic steps on an amorphous film surface, there is no Schwoebel barrier effect which would give rise to a moundlike morphology. The dynamic scaling characteristics observed during growth are unambiguously explained by a noise-induced growth mechanism. The roughness and growth exponents measured are consistent with the Mullins diffusion model with noise. [S0031-9007(96)00135-4]

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عنوان ژورنال:
  • Physical review letters

دوره 76 20  شماره 

صفحات  -

تاریخ انتشار 1996